1N5417US
1N5417US
Part Number 1N5417US Description DIODE GEN PURP 200V 3A D5B Package / Case E-MELFUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 200V 3A Surface Mount D-5B
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1N5417US - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5415 - 20US Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 1µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case E-MELF Supplier Device Package D-5B Operating Temperature - Junction -65°C ~ 175°C
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MR856RLG ON Semiconductor, Diode Standard 600V 3A Through Hole DO-201AD,
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JAN1N5617 Microsemi Corporation, Diode Standard 400V 1A Through Hole, Military, MIL-PRF-19500/429
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