1N5553US
1N5553US
Part Number 1N5553US
Description DIODE GEN PURP 800V 3A B-MELF
Package / Case SQ-MELF, B
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Diode Standard 800V 3A Surface Mount B, SQ-MELF
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1N5553US - Product Attributes
Categories
Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5550US thru 1N5554US
Standard Package 1
Manufacturer Microsemi Corporation
Series -
Packaging Bulk
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 800V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2µs
Current - Reverse Leakage @ Vr 1µA @ 800V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Supplier Device Package B, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C
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Infineon Technologies, Diode Standard 600V 150A (DC) Through Hole PG-TO247-3,
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STMicroelectronics, Diode Standard 1200V 1A Surface Mount SMB,
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1N5553US - Tags