1N5553US
1N5553US
Part Number 1N5553US Description DIODE GEN PURP 800V 3A B-MELF Package / Case SQ-MELF, BUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 800V 3A Surface Mount B, SQ-MELF
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1N5553US - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5550US thru 1N5554US Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2µs Current - Reverse Leakage @ Vr 1µA @ 800V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SQ-MELF, B Supplier Device Package B, SQ-MELF Operating Temperature - Junction -65°C ~ 175°C
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1N5802 Microsemi Corporation, Diode Standard 50V 1A Through Hole,
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CMR1U-02 TR13 Central Semiconductor Corp, Diode Standard 200V 1A Surface Mount SMB,
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ES3B ON Semiconductor, Diode Standard 100V 3A Surface Mount SMC (DO-214AB),
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RGP10G-E3/54 Vishay Semiconductor Diodes Division, Diode Standard 400V 1A Through Hole DO-204AL (DO-41), SUPERECTIFIER®
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NHPD660T4G ON Semiconductor, Diode Standard 600V 6A Surface Mount DPAK,
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CMF04(TE12L,Q,M) Toshiba Semiconductor and Storage, Diode Standard 800V 500mA Surface Mount M-FLAT (2.4x3.8),
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JANTXV1N5418 Microsemi Corporation, Diode Standard 400V 3A Through Hole, Military, MIL-PRF-19500/411
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TS4148C RZG Taiwan Semiconductor Corporation, Diode Standard 75V 150mA Surface Mount 0603,
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STTH2R06 STMicroelectronics, Diode Standard 600V 2A Through Hole DO-41,
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