1N5619
1N5619
Part Number 1N5619 Description DIODE GEN PURP 600V 1A AXIAL Package / Case A, AxialUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 600V 1A Through Hole
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1N5619 - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5615 - 1N5623 Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 250ns Current - Reverse Leakage @ Vr 500nA @ 600V Capacitance @ Vr, F 25pF @ 12V, 1MHz Mounting Type Through Hole Package / Case A, Axial Operating Temperature - Junction -65°C ~ 175°C
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S1PK-M3/84A Vishay Semiconductor Diodes Division, Diode Standard 800V 1A Surface Mount DO-220AA (SMP), eSMP®
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RFN5BGE3STL Rohm Semiconductor, Diode Standard 350V 5A Surface Mount TO-252GE,
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1N4150W-E3-08 Vishay Semiconductor Diodes Division, Diode Standard 50V 200mA Surface Mount SOD-123,
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RGL34D-E3/98 Vishay Semiconductor Diodes Division, Diode Standard 200V 500mA Surface Mount DO-213AA (GL34), SUPERECTIFIER®
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S4J V7G Taiwan Semiconductor Corporation, Diode Standard 600V 4A Surface Mount DO-214AB (SMC),
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RGL41J-E3/96 Vishay Semiconductor Diodes Division, Diode Standard 600V 1A Surface Mount DO-213AB, SUPERECTIFIER®
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1N5619 - Tags
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