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1N5809US

1N5809US

Part Number1N5809US

ManufacturerMicrosemi Corporation

DescriptionDIODE GEN PURP 100V 3A B-MELF

Datasheet1N5807,09,11 US/URS

Package / CaseSQ-MELF, B

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Standard 100V 3A Surface Mount B, SQ-MELF

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1N5809US - Product Attributes

Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	1N5807,09,11 US/URS
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Bulk
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	3A
Voltage - Forward (Vf) (Max) @ If	875mV @ 4A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30ns
Current - Reverse Leakage @ Vr	5µA @ 100V
Capacitance @ Vr, F	60pF @ 10V, 1MHz
Mounting Type	Surface Mount
Package / Case	SQ-MELF, B
Supplier Device Package	B, SQ-MELF
Operating Temperature - Junction	-65°C ~ 175°C

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