1N649-1
1N649-1
Part Number 1N649-1 Description DIODE GEN PURP 600V 400MA DO35 Package / Case DO-204AH, DO-35, AxialUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 600V 400mA Through Hole DO-35
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1N649-1 - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N649-1 Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 400mA Voltage - Forward (Vf) (Max) @ If 1V @ 400mA Speed Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr 50nA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 175°C
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RGL41G-E3/96 Vishay Semiconductor Diodes Division, Diode Standard 400V 1A Surface Mount DO-213AB, SUPERECTIFIER®
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RS1K R3G Taiwan Semiconductor Corporation, Diode Standard 800V 1A Surface Mount DO-214AC (SMA),
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RFN3BM6SFHTL Rohm Semiconductor, Diode Standard 600V 3A Surface Mount TO-252, Automotive, AEC-Q101
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1N5554C.TR Semtech Corporation, Diode Standard 1000V 5A Through Hole Axial,
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1N649-1 - Tags
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