1N8030-GA

Part Number1N8030-GA

ManufacturerGeneSiC Semiconductor

DescriptionDIODE SCHOTTKY 650V 750MA TO257

Datasheet1N8030-GA

Package / CaseTO-257-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 750mA Through Hole TO-257

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1N8030-GA - Product Attributes

Categories

Discrete Semiconductor Products / Diodes - Rectifiers - Single

Datasheet

1N8030-GA

Standard Package

Manufacturer

GeneSiC Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

750mA

Voltage - Forward (Vf) (Max) @ If

1.39V @ 750mA

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

5µA @ 650V

Capacitance @ Vr, F

76pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-257-3

Supplier Device Package

TO-257

Operating Temperature - Junction

-55°C ~ 250°C

Base Part Number

1N8030

All categories

1N8030-GA

Part Number1N8030-GA

ManufacturerGeneSiC Semiconductor

DescriptionDIODE SCHOTTKY 650V 750MA TO257

Datasheet1N8030-GA

Package / CaseTO-257-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 750mA Through Hole TO-257

1N8030-GA - Product Attributes

1N8030-GA - Tags