2DB1182Q-13


2DB1182Q-13

Part Number2DB1182Q-13

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2DB1182Q-13 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerDiodes Incorporated
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)32V
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 3V
Power - Max10W
Frequency - Transition110MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Base Part Number2DB1182

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2DB1182Q-13 - Tags

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