2N2270
2N2270
Part Number 2N2270 Description TRANS NPN 45V 1A TO-39 Package / Case TO-205AD, TO-39-3 Metal CanUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Through Hole TO-39
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2N2270 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N2270 Standard Package 500 Manufacturer Central Semiconductor Corp Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 900mV @ 15mA, 150mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA, 10V Power - Max 1W Frequency - Transition 100MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39
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BC846BW-7-F Diodes Incorporated, Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 200mW Surface Mount SOT-323,
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2SC3265-Y,LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 25V 800mA 120MHz 200mW Surface Mount TO-236,
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PN3565 Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 25V 50mA 240MHz 625mW Through Hole TO-92,
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DSC5C01S0L Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 100V 20mA 140MHz 150mW Surface Mount SMini3-F2-B,
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