2N2907AE4

Part Number2N2907AE4

ManufacturerMicrosemi Corporation

DescriptionDIE TRANS PNP MED PWR GEN PURP T

Datasheet2N2906A, 07A(L,UA,UB,UBC)

Package / CaseTO-206AA, TO-18-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18

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2N2907AE4 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N2906A, 07A(L,UA,UB,UBC)

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Active

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

500mW

Frequency - Transition

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-206AA, TO-18-3 Metal Can

Supplier Device Package

TO-18

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