2N3019S

Part Number2N3019S

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 80V 1A TO-39

Datasheet2N3019S

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39 (TO-205AD)

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2N3019S - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N3019S

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 10V

Power - Max

800mW

Frequency - Transition

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Supplier Device Package

TO-39 (TO-205AD)

All categories

2N3019S

Part Number2N3019S

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 80V 1A TO-39

Datasheet2N3019S

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39 (TO-205AD)

2N3019S - Product Attributes

2N3019S - Tags