2N3583
2N3583
Part Number 2N3583 Description TRANS NPN 175V 1A TO-66 Package / Case TO-213AA, TO-66-2Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 175V 1A 10MHz 35W Through Hole TO-66
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2N3583 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3583 thru 2N3585 Standard Package 30 Manufacturer Central Semiconductor Corp Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 175V Vce Saturation (Max) @ Ib, Ic 5V @ 125mA, 1A Current - Collector Cutoff (Max) 10mA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 10V Power - Max 35W Frequency - Transition 10MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-213AA, TO-66-2 Supplier Device Package TO-66
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BC817-40W,135 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 200mW Surface Mount SC-70, Automotive, AEC-Q101
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2SCR542PT100 Rohm Semiconductor, Bipolar (BJT) Transistor NPN 30V 5A 250MHz 2W Surface Mount MPT3,
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DSC700300L Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 50V 1A 170MHz 1W Surface Mount MiniP3-F2-B,
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DNLS350Y-13 Diodes Incorporated, Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-89-3,
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BC33725TA ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92-3,
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PBSS4540X,135 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 4A 70MHz 1.6W Surface Mount SOT-89,
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