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2N3810


2N3810

Part Number2N3810

Manufacturer

Description

Datasheet

Package / CaseTO-78-6 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N3810 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Power - Max350mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78-6

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