2N4261UB


2N4261UB

Part Number2N4261UB

Manufacturer

Description

Datasheet

Package / Case3-SMD, No Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N4261UB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)15V
Vce Saturation (Max) @ Ib, Ic350mV @ 1mA, 10mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 1V
Power - Max200mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageUB

2N4261UB - Tags

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