2N4449UB


2N4449UB

Part Number2N4449UB

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Detailed Description

2N4449UB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/317
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 1V
Power - Max360mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case-
Supplier Device PackageUB

2N4449UB - Tags

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