2N5012S


2N5012S

Part Number2N5012S

Manufacturer

Description

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N5012S - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Standard Package1
ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/727
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)700V
Vce Saturation (Max) @ Ib, Ic1.6V @ 5mA, 25mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 25mA, 10V
Power - Max1W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

2N5012S - Tags

2N5012S 2N5012S PDF 2N5012S datasheet 2N5012S specification 2N5012S image 2N5012S India Renesas Electronics India 2N5012S buy 2N5012S 2N5012S price 2N5012S distributor 2N5012S supplier 2N5012S wholesales