2N5551TA
2N5551TA
Part Number 2N5551TA Description TRANS NPN 160V 0.6A TO-92 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
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2N5551TA - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N5551 - MMBT5551 Standard Package 2000 Manufacturer ON Semiconductor Series - Packaging Tape & Box (TB) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 Base Part Number 2N5551
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PXT4401,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 1.1W Surface Mount SOT-89, Automotive, AEC-Q101
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DZT658-13 Diodes Incorporated, Bipolar (BJT) Transistor NPN 400V 500mA 50MHz 1W Surface Mount SOT-223,
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2N3584 Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 250V 2A 10MHz 35W Through Hole TO-66,
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BCV47E6327HTSA1 Infineon Technologies, Bipolar (BJT) Transistor NPN - Darlington 60V 500mA 170MHz 360mW Surface Mount SOT-23-3,
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