2N5581


2N5581

Part Number2N5581

Manufacturer

Description

Datasheet

Package / CaseTO-206AB, TO-46-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N5581 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Power - Max500mW
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-206AB, TO-46-3 Metal Can
Supplier Device PackageTO-46 (TO-206AB)

2N5581 - Tags

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