2N5830

Part Number2N5830

ManufacturerON Semiconductor

DescriptionTRANS NPN 100V 0.2A TO-92

Datasheet2N5830

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 200mA 625mW Through Hole TO-92-3

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2N5830 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N5830

Standard Package

2000

Manufacturer

ON Semiconductor

Series

Packaging

Bulk

Part Status

Obsolete

Transistor Type

NPN

Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Power - Max

625mW

Frequency - Transition

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

Base Part Number

2N5830

All categories

2N5830

Part Number2N5830

ManufacturerON Semiconductor

DescriptionTRANS NPN 100V 0.2A TO-92

Datasheet2N5830

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 200mA 625mW Through Hole TO-92-3

2N5830 - Product Attributes

2N5830 - Tags