2N6035G
2N6035G
Part Number 2N6035G Description TRANS PNP DARL 60V 4A TO-225AA Package / Case TO-225AA, TO-126-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP - Darlington 60V 4A 40W Through Hole TO-225AA
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2N6035G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N6034(35, 36, 38,39) Standard Package 500 Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V Power - Max 40W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA Base Part Number 2N6035
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2SB1690KT146 Rohm Semiconductor, Bipolar (BJT) Transistor PNP 12V 2A 360MHz 200mW Surface Mount SMT3,
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PN2907A Central Semiconductor Corp, Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92,
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DZT5401-13 Diodes Incorporated, Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 1W Surface Mount SOT-223,
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MPSA56-AP Micro Commercial Co, Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 625mW Through Hole TO-92,
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DZT955-13 Diodes Incorporated, Bipolar (BJT) Transistor PNP 140V 4A 150MHz 1W Surface Mount SOT-223,
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