2N6123
2N6123
Part Number 2N6123 Description TRANS NPN 80V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 80V 4A 2.5MHz 40W Through Hole TO-220
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2N6123 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N6121 thru 2N6124 Standard Package 400 Manufacturer Central Semiconductor Corp Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A, 2V Power - Max 40W Frequency - Transition 2.5MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220
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BCX19LT1G ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 500mA 300mW Surface Mount SOT-23-3 (TO-236),
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BC847BFA-7B Diodes Incorporated, Bipolar (BJT) Transistor NPN 45V 100mA 170MHz 435mW Surface Mount,
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2SD2351T106W Rohm Semiconductor, Bipolar (BJT) Transistor NPN 50V 150mA 250MHz 200mW Surface Mount UMT3,
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SMBTA42E6327HTSA1 Infineon Technologies, Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 360mW Surface Mount SOT-23-3,
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PHPT60603NYX Nexperia USA Inc., Bipolar (BJT) Transistor NPN 60V 3A 140MHz 1.25W Surface Mount LFPAK56, Power-SO8,
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ZXTN2005ZTA Diodes Incorporated, Bipolar (BJT) Transistor NPN 25V 5.5A 150MHz 2.1W Surface Mount SOT-89-3,
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BCW60C,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 32V 100mA 250MHz 250mW Surface Mount TO-236AB,
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BD677G ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA,
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2SC3325-Y,LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 50V 500mA 300MHz 200mW Surface Mount S-Mini,
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