2N6317


2N6317

Part Number2N6317

Manufacturer

Description

Datasheet

Package / CaseTO-213AA, TO-66-2

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N6317 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)7A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic2V @ 1.75A, 7A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 2.5A, 4V
Power - Max90W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2

2N6317 - Tags

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