2N6849

Part Number2N6849

ManufacturerMicrosemi Corporation

DescriptionMOSFET P-CH 100V TO-205AF TO-39

Datasheet2N6849

Package / CaseTO-205AF Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

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2N6849 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

2N6849

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34.8nC @ 10V

Vgs (Max)

±20V

FET Feature

Power Dissipation (Max)

800mW (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AF Metal Can

All categories

2N6849

Part Number2N6849

ManufacturerMicrosemi Corporation

DescriptionMOSFET P-CH 100V TO-205AF TO-39

Datasheet2N6849

Package / CaseTO-205AF Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

2N6849 - Product Attributes

2N6849 - Tags