2N7000G

Part Number2N7000G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 200MA TO-92

Datasheet2N7000 Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole TO-92-3

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2N7000G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

2N7000 Datasheet

Standard Package

1000

Manufacturer

ON Semiconductor

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

Power Dissipation (Max)

350mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

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