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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002BK Datasheet
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
FET Feature -
Power Dissipation (Max) 370mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
SI7434DP-T1-GE3
Vishay Siliconix, N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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STS5N15F4
STMicroelectronics, N-Channel 150V 5A (Tc) 2.5W (Tc) Surface Mount 8-SO, DeepGATE™, STripFET™
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STF33N60M2
STMicroelectronics, N-Channel 600V 26A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
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STN3NF06L
STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II
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FDD9411L-F085
ON Semiconductor, N-Channel 40V 25A (Tc) 48.4W (Tj) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101, PowerTrench®
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SQD25N06-22L_GE3
Vishay Siliconix, N-Channel 60V 25A (Tc) 62W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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NTMFS4823NT1G
ON Semiconductor, N-Channel 30V 6.9A (Ta), 30A (Tc) 860mW (Ta), 32.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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CSD17510Q5A
Texas Instruments, N-Channel 30V 20A (Ta), 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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SIHG25N40D-GE3
Vishay Siliconix, N-Channel 400V 25A (Tc) 278W (Tc) Through Hole TO-247AC,
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STP14NM50N
STMicroelectronics, N-Channel 500V 12A (Tc) 90W (Tc) Through Hole TO-220, MDmesh™ II
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STL36N60M6
STMicroelectronics, N-Channel 600V 25A (Tc) 160W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ M6
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IRFR010PBF
Vishay Siliconix, N-Channel 50V 8.2A (Tc) 25W (Tc) Surface Mount D-Pak,
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