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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002BK Datasheet
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
FET Feature -
Power Dissipation (Max) 370mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
PMZ390UN,315
Nexperia USA Inc., N-Channel 30V 1.78A (Tc) 2.5W (Tc) Surface Mount DFN1006-3, TrenchMOS™
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Microchip Technology, N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3,
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Toshiba Semiconductor and Storage, N-Channel 650V 35A (Ta) 50W (Tc) Through Hole TO-220SIS, DTMOSIV
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Vishay Siliconix, N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3,
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Vishay Siliconix, N-Channel 40V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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STMicroelectronics, N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220-3, MDmesh™ II
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Infineon Technologies, N-Channel 60V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™
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STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™
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