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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002BK Datasheet
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
FET Feature -
Power Dissipation (Max) 370mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
SSM3K16CTC,L3F
Toshiba Semiconductor and Storage, N-Channel 20V 200mA (Ta) 500mW (Ta) Surface Mount CST3C,
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DMT6007LFG-7
Diodes Incorporated, N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8,
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HUF75652G3
ON Semiconductor, N-Channel 100V 75A (Tc) 515W (Tc) Through Hole TO-247-3, UltraFET™
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MCAC53N06Y-TP
Micro Commercial Co, N-Channel 60V 53A (Tc) 70W (Tc) Surface Mount DFN5060,
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IRFB4321PBF
Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Through Hole TO-220AB, HEXFET®
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TK40E10N1,S1X
Toshiba Semiconductor and Storage, N-Channel 100V 90A (Tc) 126W (Tc) Through Hole TO-220, U-MOSVIII-H
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STL3N10F7
STMicroelectronics, N-Channel 100V 4A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2), DeepGATE™, STripFET™ VII
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DMN3033LSN-7
Diodes Incorporated, N-Channel 30V 6A (Ta) 1.4W (Ta) Surface Mount SC-59-3,
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DMT6010LSS-13
Diodes Incorporated, N-Channel 60V 14A (Ta) 1.5W (Ta) Surface Mount 8-SO,
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IPS70R900P7SAKMA1
Infineon Technologies, N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
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STL7N10F7
STMicroelectronics, N-Channel 100V 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3), DeepGATE™, STripFET™ VII
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STB24N65M2
STMicroelectronics, N-Channel 650V 16A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™ M2
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