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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002CK
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 55pF @ 25V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
FDS8842NZ
ON Semiconductor, N-Channel 40V 14.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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NTMTS001N06CLTXG
ON Semiconductor, N-Channel 60V 398.2A 5W,
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IPW60R031CFD7XKSA1
Infineon Technologies, N-Channel 650V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3, CoolMOS™ CFD7
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FDMS86252
ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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BSS138K
ON Semiconductor, N-Channel 50V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
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BSH114,215
Nexperia USA Inc., N-Channel 100V 500mA (Ta) 360mW (Ta), 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™
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VN2460N3-G
Microchip Technology, N-Channel 600V 160mA (Tj) 1W (Ta) Through Hole TO-92-3,
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STP110N7F6
STMicroelectronics, N-Channel 68V 110A (Tc) 176W (Tc) Through Hole TO-220, STripFET™ F6
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IPW60R041P6FKSA1
Infineon Technologies, N-Channel 600V 77.5A (Tc) 481W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6
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IRF6810STRPBF
Infineon Technologies, N-Channel 25V 16A (Ta), 50A (Tc) 2.1W (Ta), 20W (Tc) Surface Mount DIRECTFET S1, HEXFET®
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NVB072N65S3
ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D2PAK-3 (TO-263), Automotive, AEC-Q101, SuperFET® III, FRFET®
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STD3N95K5AG
STMicroelectronics, N-Channel 2A (Tc) 45W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, MDmesh™ K5
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