2N7002E-T1-GE3
2N7002E-T1-GE3
Part Number 2N7002E-T1-GE3 Description MOSFET N-CH 60V 240MA SOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount
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2N7002E-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002E Datasheet Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 240mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3
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