Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2SA1298
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	800mA
Voltage - Collector Emitter Breakdown (Max)	25V
Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Power - Max	200mW
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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2SB1202S-E	ON Semiconductor, Bipolar (BJT) Transistor PNP 50V 3A 150MHz 1W Through Hole TP,	View
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2N3637UB	Microsemi Corporation, Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface Mount UB,	View
TIP147T	ON Semiconductor, Bipolar (BJT) Transistor PNP - Darlington 100V 10A 80W Through Hole TO-220-3,	View
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MJF2955G	ON Semiconductor, Bipolar (BJT) Transistor PNP 90V 10A 2MHz 2W Through Hole TO-220FP,	View

2SA1298-Y,LF

Part Number2SA1298-Y,LF