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2SA1869-Y,Q(J


2SA1869-Y,Q(J

Part Number2SA1869-Y,Q(J

Manufacturer

Description

Datasheet

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SA1869-Y,Q(J - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingBulk
Part StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Power - Max10W
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

2SA1869-Y,Q(J - Tags

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