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2SA2016-TD-E


2SA2016-TD-E

Part Number2SA2016-TD-E

Manufacturer

Description

Datasheet

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SA2016-TD-E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)7A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic400mV @ 40mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 2V
Power - Max3.5W
Frequency - Transition330MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePCP

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2SA2016-TD-E - Tags

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