2SA965-Y(T6CANO,FM

Part Number2SA965-Y(T6CANO,FM

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PNP 800MA 120V TO226-3

Datasheet2SA965

Package / CaseTO-226-3, TO-92-3 Long Body

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM

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2SA965-Y(T6CANO,FM - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2SA965

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Bulk

Part Status

Obsolete

Transistor Type

PNP

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

LSTM

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