2SB08730Q


2SB08730Q

Part Number2SB08730Q

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 Long Body

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SB08730Q - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package200
ManufacturerPanasonic Electronic Components
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)5A
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2A, 2V
Power - Max1W
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92L-A1

2SB08730Q - Tags

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