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2SB1122S-TD-E


2SB1122S-TD-E

Part Number2SB1122S-TD-E

Manufacturer

Description

Datasheet

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SB1122S-TD-E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 2V
Power - Max500mW
Frequency - Transition150MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePCP

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2SB1122S-TD-E - Tags

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