2SB1216S-E
2SB1216S-E
Part Number 2SB1216S-E Description TRANS PNP 100V 4A TP Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP
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2SB1216S-E - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2SB1216/2SD1816 Standard Package 500 Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V Power - Max 1W Frequency - Transition 130MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TP Base Part Number 2SB1216
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