2SB817C-1E

Part Number2SB817C-1E

ManufacturerON Semiconductor

DescriptionTRANS PNP 140V 12A

Datasheet2SB817C

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 140V 12A 10MHz 120W Through Hole TO-3P-3L

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2SB817C-1E - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2SB817C

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Last Time Buy

Transistor Type

PNP

Current - Collector (Ic) (Max)

12A

Voltage - Collector Emitter Breakdown (Max)

140V

Vce Saturation (Max) @ Ib, Ic

2V @ 500mA, 5A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 5V

Power - Max

120W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P-3L

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