2SB817C-1E


2SB817C-1E

Part Number2SB817C-1E

Manufacturer

Description

Datasheet

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SB817C-1E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package30
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusLast Time Buy
Transistor TypePNP
Current - Collector (Ic) (Max)12A
Voltage - Collector Emitter Breakdown (Max)140V
Vce Saturation (Max) @ Ib, Ic2V @ 500mA, 5A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Power - Max120W
Frequency - Transition10MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P-3L

2SB817C-1E - Tags

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