2SB906-Y(TE16L1,NQ
2SB906-Y(TE16L1,NQ
Part Number 2SB906-Y(TE16L1,NQ
Description TRANS PNP 60V 3A PW-MOLD
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor PNP 60V 3A 9MHz 1W Surface Mount PW-MOLD
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2SB906-Y(TE16L1,NQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2SB906
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 9MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PW-MOLD
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