2SC3646S-P-TD-E


2SC3646S-P-TD-E

Part Number2SC3646S-P-TD-E

Manufacturer

Description

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SC3646S-P-TD-E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Standard Package1000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic400mV @ 40mA, 400mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 5V
Power - Max500mW
Frequency - Transition120MHz
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePCP

2SC3646S-P-TD-E - Tags

2SC3646S-P-TD-E 2SC3646S-P-TD-E PDF 2SC3646S-P-TD-E datasheet 2SC3646S-P-TD-E specification 2SC3646S-P-TD-E image 2SC3646S-P-TD-E India Renesas Electronics India 2SC3646S-P-TD-E buy 2SC3646S-P-TD-E 2SC3646S-P-TD-E price 2SC3646S-P-TD-E distributor 2SC3646S-P-TD-E supplier 2SC3646S-P-TD-E wholesales