Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5065
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	12dB ~ 17dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10mA, 5V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFU660F,115	NXP USA Inc., RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP,	View
BFP196WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
BFP520H6327XTSA1	Infineon Technologies, RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mount PG-SOT343-4,	View
BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
15GN03MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 1.5GHz 400mW Surface Mount 3-MCP,	View
BFP196WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View
SS9018GBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI,	View
BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
BFR106E6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 210mA 5GHz 700mW Surface Mount SOT-23-3,	View

2SC5065-Y(TE85L,F)

Part Number2SC5065-Y(TE85L,F)