Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5065
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	12dB ~ 17dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10mA, 5V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
BFP183E7764HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT143-4,	View
2N918	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 600MHz 200mW Through Hole TO-72,	View
BFU610F,115	NXP USA Inc., RF Transistor NPN 5.5V 10mA 15GHz 136mW Surface Mount 4-DFP,	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
BFP842ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 3.7V 40mA 60GHz 120mW Surface Mount SOT-343,	View

2SC5065-Y(TE85L,F)

Part Number2SC5065-Y(TE85L,F)