Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5084
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
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2SC5084-O(TE85L,F)

Part Number2SC5084-O(TE85L,F)