Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

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MCH4009-TL-H	ON Semiconductor, RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount 4-MCPH,	View
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BFY90	Central Semiconductor Corp, RF Transistor NPN 15V 25mA 1.4GHz 200mW Through Hole TO-72,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View
BFR181WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SOT323-3,	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
SS9018HBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
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BFU590QX	NXP USA Inc., RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3,	View

2SC5095-O(TE85L,F)

Part Number2SC5095-O(TE85L,F)