2SD1407A-Y(F)

Part Number2SD1407A-Y(F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN 100V 5A TO220NIS

Datasheet2SD1407A

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 5A 12MHz 30W Through Hole TO-220NIS

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2SD1407A-Y(F) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2SD1407A

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

2V @ 400mA, 4A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1A, 5V

Power - Max

30W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

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