2SD2014
2SD2014
Part Number 2SD2014
Description TRANS NPN DARL 80V 4A TO220F
Package / Case TO-220-3 Full Pack
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 80V 4A 75MHz 25W Through Hole TO-220F
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2SD2014 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2SD2014
Standard Package 50
Manufacturer Sanken
Series -
Packaging Bulk
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V
Power - Max 25W
Frequency - Transition 75MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
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Rohm Semiconductor, Bipolar (BJT) Transistor NPN 25V 50mA 300MHz 200mW Surface Mount SMT3,
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN 60V 1A 100MHz 1.3W Surface Mount SC-73,
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2SD2014 - Tags