2ST501T
2ST501T
Part Number 2ST501T Description TRANS NPN DARL 350V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 350V 4A 100W Through Hole TO-220AB
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2ST501T - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2ST501T Standard Package 50 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 100W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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CMPT2369 TR Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 15V 500mA 500MHz 350mW Surface Mount SOT-23,
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PMBT3904M,315 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 590mW Surface Mount DFN1006-3,
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