Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Datasheet	3SK291
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	N-Channel Dual Gate
Frequency	800MHz
Gain	22.5dB
Voltage - Test	6V
Current Rating (Amps)	30mA
Noise Figure	2.5dB
Current - Test	10mA
Power - Output	-
Voltage - Rated	12.5V
Package / Case	SC-61AA
Supplier Device Package	SMQ

BF992,215	NXP USA Inc., RF Mosfet N-Channel Dual Gate 10V 15mA 200MHz SOT-143B,	View
CE3512K2-C1	CEL, RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X,	View
SD2942W	STMicroelectronics, RF Mosfet N-Channel 50V 500mA 175MHz 17dB 350W M244,	View
VRF151	Microsemi Corporation, RF Mosfet N-Channel 50V 250mA 175MHz 14dB 150W M174,	View
IXZ316N60	IXYS-RF, RF Mosfet N-Channel 100V 65MHz 23dB 880W DE375, Z-MOS™	View
MRF157	M/A-Com Technology Solutions, RF Mosfet N-Channel 50V 800mA 80MHz 21dB 600W 368-03, Style 2,	View
CE3512K2-C1	CEL, RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X,	View
ARF1501	Microsemi Corporation, RF Mosfet N-Channel 250V 27.12MHz 17dB 750W T-1,	View
3SK294(TE85L,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel 6V 10mA 500MHz 26dB USQ,	View
ARF461AG	Microsemi Corporation, RF Mosfet N-Channel 50V 65MHz 15dB 150W TO-247,	View
3SK291(TE85L,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel Dual Gate 6V 10mA 800MHz 22.5dB SMQ,	View
3SK292(TE85R,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel Dual Gate 6V 10mA 500MHz 26dB SMQ,	View

3SK291(TE85L,F)

Part Number3SK291(TE85L,F)