Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	55GN01MA
Standard Package	3000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f)	1.9dB @ 1GHz
Gain	10dB @ 1GHz
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	3-MCP

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2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
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55GN01MA-TL-E

Part Number55GN01MA-TL-E