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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet AONY36352
Standard Package 1
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 15V, 2555pF @ 15V
Power - Max 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Supplier Device Package 8-DFN (5x6)
CSD87355Q5D
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ON Semiconductor, Mosfet Array 2 N-Channel (Dual) 40V 17.6A (Ta), 70A (Tc) 3.2W (Ta), 50W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual),
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DMTH4007SPD-13
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SI4904DY-T1-E3
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EPC, Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die, eGaN®
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EPC2104
EPC, Mosfet Array 2 N-Channel (Half Bridge) 100V 23A Surface Mount Die, eGaN®
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EPC2110ENGRT
EPC, Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die, eGaN®
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EPC2101
EPC, Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die, eGaN®
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