APT1001R1BN

Part NumberAPT1001R1BN

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1000V 10.5A TO247AD

DatasheetAPT1001R1BN, APT1001R3BN

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 10.5A (Tc) 310W (Tc) Through Hole TO-247AD

To learn about the specification of APT1001R1BN, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add APT1001R1BN with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of APT1001R1BN.
We are offering APT1001R1BN for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

APT1001R1BN - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APT1001R1BN, APT1001R3BN

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS IV®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 5.25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-247-3

All categories