APT1001RBN

Part NumberAPT1001RBN

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1000V 11A TO247AD

DatasheetAPT1001RBN

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 11A (Tc) 310W (Tc) Through Hole TO-247AD

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APT1001RBN - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APT1001RBN

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS IV®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-247-3

All categories

APT1001RBN

Part NumberAPT1001RBN

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1000V 11A TO247AD

DatasheetAPT1001RBN

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 11A (Tc) 310W (Tc) Through Hole TO-247AD

APT1001RBN - Product Attributes

APT1001RBN - Tags