APT10M11B2VFRG

Part NumberAPT10M11B2VFRG

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 100V 100A T-MAX

DatasheetAPT10M11(B2,L)VFR

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 100A (Tc) 520W (Tc) Through Hole T-MAX™

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APT10M11B2VFRG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APT10M11(B2,L)VFR

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

450nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10300pF @ 25V

FET Feature

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™

Package / Case

TO-247-3 Variant

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